? semiconductor components industries, llc, 2011 november, 2011 ? rev. 0 1 publication order number: ntsj2080ct/d NTSJ2080CTG very low forward voltage trench-based schottky rectifier exceptionally low v f = 0.50 v at i f = 5 a features ? fine lithography trench ? based schottky technology for very low forward voltage and low leakage ? fast switching with exceptional temperature stability ? low power loss and lower operating temperature ? higher efficiency for achieving regulatory compliance ? low thermal resistance ? high surge capability ? pb ? free and halide ? free packages are available typical applications ? switching power supplies including notebook / netbook adapters, atx and flat panel display ? high frequency and dc ? dc converters ? freewheeling and or ? ing diodes ? reverse battery protection ? instrumentation mechanical characteristics ? case: epoxy, molded ? epoxy meets flammability rating ul 94 ? 0 @ 0.125 in ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead temperature for soldering purposes: 260 c maximum for 10 sec to ? 220fb case 221ah 1 3 2, 4 marking diagrams http://onsemi.com see detailed ordering and shipping information in the package dimensions section on p age 2 of this data sheet. ordering information pin connections a = assembly location y = year ww = work week aka = polarity designator g = pb ? free package ayww ts2080cg aka 1
NTSJ2080CTG http://onsemi.com 2 maximum ratings rating symbol value unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 80 v average rectified forward current (rated v r , t c = 130 c) per device per diode i f(av) 20 10 a peak repetitive forward current (rated v r , square wave, 20 khz, t c = 125 c) per device per diode i frm 40 20 a nonrepetitive peak surge current (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 150 a operating junction temperature t j ? 40 to +150 c storage temperature t stg ? 40 to +150 c voltage rate of change (rated v r ) dv/dt 10,000 v/ s stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. thermal characteristics rating symbol value unit maximum thermal resistance (insertion mounted to 1 oz fr4 board) junction ? to ? case r jc 4.0 c/w junction ? to ? ambient r ja 105 c/w 1. junction ? to ? case, using large heatsink attached to device. 2. junction ? to ? ambient, using with no heatsink. electrical characteristics (per leg unless otherwise noted) rating symbol typ max unit maximum instantaneous forward voltage (note 3) (i f = 5 a, t j = 25 c) (i f = 10 a, t j = 25 c) (i f = 5 a, t j = 125 c) (i f = 10 a, t j = 125 c) v f 0.55 0.65 0.50 0.58 ? 0.83 ? 0.68 v maximum instantaneous reverse current (note 3) (rated dc voltage, t j = 25 c) (rated dc voltage, t j = 125 c) i r ? 6 600 20 a ma 3. pulse test: pulse width = 300 s, duty cycle 2.0% ordering information device package shipping NTSJ2080CTG to ? 220fp (halide ? free) 50 units / rail
NTSJ2080CTG http://onsemi.com 3 typical characterisitics figure 1. typical forward voltage figure 2. typical reverse current figure 3. typical junction capacitance v f , instantaneous forward voltage (volts) 100 1.0 0.1 20 v r , reverse voltage (volts) 0.001 i f , instantaneous forward current (amps) i 0.6 0.8 1.0 40 60 0 0.2 0.4 80 t a = 25 c t a = 125 c t a = 150 c 0.01 0.1 t a = 25 c t a = 125 c t a = 150 c 1.0 10 100 , reverse current (ma) r 1.2 0.1 v r , reverse voltage (volts) 10000 1000 10 110 100 t j = 25 c 10 30 50 70 c j , junction capacitance (pf) figure 4. current derating per leg 0 5 10 15 20 0 20 40 60 80 100 120 140 t c , case temperature ( c) square wave dc r jc = 1.3 c/w i f(av) , average forward current (a) figure 5. current derating t c , case temperature ( c) i f(av) , average forward current (a) figure 6. forward power dissipation 0 2 4 6 8 10 12 0 4 20 24 i f(av) , average forward current (a) p f(av) , average forward power dissipation (w) square wave dc t a = 150 c i pk /i av = 5 i pk /i av = 10 i pk /i av = 20 81216 1.4 1.6 1.8 100 0 5 10 15 20 25 30 0 20 40 60 80 100 120 140 square wave dc r jc = 1.3 c/w 35 40 14 16 18 20
NTSJ2080CTG http://onsemi.com 4 typical characterisitics 10% 5% 2% 20% 1% 50% duty cycle single pulse t, pulse time (sec) r(t), typical transient thermal resistance ( c/w) figure 7. typical transient thermal response, junction ? to ? case 0.001 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
NTSJ2080CTG http://onsemi.com 5 package dimensions to ? 220 fullpack, 3 ? lead case 221ah issue b dim min max millimeters d 14.70 15.30 e 9.70 10.30 a 4.30 4.70 b 0.54 0.84 p 3.00 3.40 e l1 --- 2.80 c 0.49 0.79 l 12.70 14.73 b2 1.10 1.40 q 2.80 3.20 a2 2.50 2.70 a1 2.50 2.90 h1 6.70 7.10 e q l1 b2 e d l p 123 4 b seating plane a a1 h1 a2 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. contour uncontrolled in this area. 4. dimensions d and e do not include mold flash and gate protrusions. mold flash and gate protrusions not to exceed 0.13 per side. these dimensions are to be measured at outermost extreme of the plastic body. 5. dimension b2 does not include dambar protrusion. lead width including protrusion shall not exceed 2.00. 2.54 bsc m 0.14 m a a b c e/2 m 0.25 m a b 3x c 3x b note 3 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 ntsj2080ct/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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